Second and third harmonic generation at UV and soft x-ray wavelengths from semiconductor gratings

M. A. Vincenti; D. de Ceglia; M. Scalora

doi:10.1117/12.893686

9 September 2011 Second and third harmonic generation at UV and soft x-ray wavelengths from semiconductor gratings

M. A. Vincenti, D. de Ceglia, M. Scalora

Proceedings Volume 8093, Metamaterials: Fundamentals and Applications IV; 80932C (2011) https://doi.org/10.1117/12.893686
Event: SPIE NanoScience + Engineering, 2011, San Diego, California, United States

Abstract

Extraordinary transmission properties are demonstrated in the UV range for GaAs gratings with sub-wavelength apertures under TM-polarization excitation. The metal-like response below 270nm, typical of several semiconductors such as GaAs or GaP, in fact may be used to excite surface waves that lead to enhance transmission in the linear regime and for novel nonlinear optical phenomena in the UV and soft X-ray ranges. An investigation of the linear transmission as a function of geometrical parameters of the grating reveals the formation of surface waves and relatively high transmission values even in regimes where the nominal absorption is significant. Strong field localization in subwavelength cavities and on the surface of the grating can be achieved under proper excitation conditions leading to the enhancement of harmonic generation. Nonlinear contributions to harmonic generation arise from symmetry breaking, the nonlinear magnetic Lorentz force, and from intrinsic, dipolar volume contributions. Preliminary results show promising nonlinear conversion efficiencies at wavelengths below 100nm, and demonstrate cross-coupling of TE and TM polarizations for pump and harmonic signals. A down-conversion process that can re-generate pump photons of polarization orthogonal compared to the incident pump field is also demonstrated.

Citation Download Citation

M. A. Vincenti, D. de Ceglia, and M. Scalora "Second and third harmonic generation at UV and soft x-ray wavelengths from semiconductor gratings", Proc. SPIE 8093, Metamaterials: Fundamentals and Applications IV, 80932C (9 September 2011); https://doi.org/10.1117/12.893686

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
6 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Gallium arsenide

Ultraviolet radiation

Harmonic generation

Semiconductors

Absorption

X-rays

Metals

Show All Keywords

Keywords/Phrases

Search In:

Publication Years