Compositional grading of InxGa1-xAs/GaAs tunnel junctions enhanced by ErAs nanoparticles

R. Salas; E. M. Krivoy; A. M. Crook; H. P. Nair; S. R. Bank

doi:10.1117/12.896937

16 September 2011 Compositional grading of In_xGa_1-xAs/GaAs tunnel junctions enhanced by ErAs nanoparticles

R. Salas, E. M. Krivoy, A. M. Crook, H. P. Nair, S. R. Bank

Proceedings Volume 8106, Nanoepitaxy: Materials and Devices III; 81060P (2011) https://doi.org/10.1117/12.896937
Event: SPIE NanoScience + Engineering, 2011, San Diego, California, United States

Abstract

We investigate the electrical conductivity of GaAs-based tunnel junctions enhanced with semimetallic ErAs nanoparticles. In particular, we examine the effects of digitally-graded InGaAs alloys on the n-type side of the tunnel junction, along with different p-type doping levels. Device characteristics of the graded structures indicate that the n-type Schottky barrier may not be the limiting factor in the tunneling current as initially hypothesized. Moreover, significantly improved forward and reverse bias tunneling currents were observed with increased p-type doping, suggesting p-side limitation.

Citation Download Citation

R. Salas, E. M. Krivoy, A. M. Crook, H. P. Nair, and S. R. Bank "Compositional grading of In_xGa_1-xAs/GaAs tunnel junctions enhanced by ErAs nanoparticles", Proc. SPIE 8106, Nanoepitaxy: Materials and Devices III, 81060P (16 September 2011); https://doi.org/10.1117/12.896937

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