Paper
16 September 2011 Growth of semimetallic ErAs films epitaxially embedded in GaAs
Adam M. Crook, Hari P. Nair, Jong Ho Lee, Domingo A. Ferrer, Deji Akinwande, Seth R. Bank
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Abstract
We present models for the growth and electrical conductivity of ErAs films grown with the nanoparticle-seeded film growth technique. This growth mode overcomes the mismatch in rotational symmetry between the rocksalt ErAs crystal structure and the zincblende GaAs crystal structure. This results in films of ErAs grown through a thin film of GaAs that preserves the symmetry of the substrate. The conductivity of the films, as a function of film thickness, are investigated and a surface roughness model is used to explain observed trends. Transmission electron micrographs confirm the suppression of anti-phase domains. A simple diffusion model is developed to describe the diffusion and incorporation of surface erbium into subsurface ErAs layers and predict potential failure mechanisms of the growth method.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Adam M. Crook, Hari P. Nair, Jong Ho Lee, Domingo A. Ferrer, Deji Akinwande, and Seth R. Bank "Growth of semimetallic ErAs films epitaxially embedded in GaAs", Proc. SPIE 8106, Nanoepitaxy: Materials and Devices III, 81060R (16 September 2011); https://doi.org/10.1117/12.896938
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Cited by 1 scholarly publication.
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KEYWORDS
Gallium arsenide

Erbium

Nanoparticles

Crystals

Heterojunctions

Interfaces

Surface roughness

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