Integrated semiconductor optoelectronic devices for real-time and indicator-free detection of aqueous nitric oxide

Shin-Ping Wang; Yi-Kai Cheng; Yu-Chiang Chao; Hsiao-Wen Zan; Gao-Fong Chang; Hsin-Fei Meng; Chen-Hsiung Hung; Wen-Chang Chen

doi:10.1117/12.893012

7 September 2011 Integrated semiconductor optoelectronic devices for real-time and indicator-free detection of aqueous nitric oxide

Shin-Ping Wang, Yi-Kai Cheng, Yu-Chiang Chao, Hsiao-Wen Zan, Gao-Fong Chang, Hsin-Fei Meng, Chen-Hsiung Hung, Wen-Chang Chen

Author Affiliations +

Proceedings Volume 8118, Organic Semiconductors in Sensors and Bioelectronics IV; 811807 (2011) https://doi.org/10.1117/12.893012
Event: SPIE Photonic Devices + Applications, 2011, San Diego, California, United States

Abstract

Sensing films specific to nitric oxide and zinc were fabricated by embedding respectively indicator 1,2-diaminoanthraquinone (DAQ) and 11,16-Bis(phenyl)-6,6,21,21-tetramethyl-m-benzi-6,21-porphodimethene (BPDM-H) in hydrogel host poly(2-hydroxyethyl methacrylate). The sensing film contains DAQ, which responses to nitric oxide, shows stability in acid environment. The sensing film contains BPDM-H responses to zinc. The electrospinning technique was also utilized to fabricate the fibrous film.

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Shin-Ping Wang, Yi-Kai Cheng, Yu-Chiang Chao, Hsiao-Wen Zan, Gao-Fong Chang, Hsin-Fei Meng, Chen-Hsiung Hung, and Wen-Chang Chen "Integrated semiconductor optoelectronic devices for real-time and indicator-free detection of aqueous nitric oxide", Proc. SPIE 8118, Organic Semiconductors in Sensors and Bioelectronics IV, 811807 (7 September 2011); https://doi.org/10.1117/12.893012

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