Paper
8 September 2011 High quality mid-infrared InAs film grown on (100) GaSb substrate by LPE using a ternary melt
Changhong Sun, Shuhong Hu, Qiwei Wang, Jie Wu, Ning Dai
Author Affiliations +
Abstract
InAs film has been successfully grown on (100) GaSb substrate using a ternary In-As-Sb melt by liquid phase epitaxy (LPE). The high resolution X-ray diffraction (HRXRD) and Rocking curve showed the film was single crystalline InAs with high quality. The Fourier transform infrared (FTIR) transmission spectrum revealed that the cutoff wavelength was about 3.8 μm at room temperature. The electron mobility at 300 K is higher than 2×10 4cm2/Vs. It indicates that the structure of InAs/GaSb prepared by LPE has a potential for mid-infrared devices.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Changhong Sun, Shuhong Hu, Qiwei Wang, Jie Wu, and Ning Dai "High quality mid-infrared InAs film grown on (100) GaSb substrate by LPE using a ternary melt", Proc. SPIE 8193, International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Infrared Imaging and Applications, 81932L (8 September 2011); https://doi.org/10.1117/12.900489
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Gallium antimonide

Liquid phase epitaxy

Indium arsenide

FT-IR spectroscopy

Antimony

Crystals

Mid-IR

RELATED CONTENT

Antimonide-based materials for infrared detection
Proceedings of SPIE (January 23 2003)
Lattice mismatched growth for mid-IR VECSELs
Proceedings of SPIE (February 21 2011)
X ray diffraction analysis of high quality InAs GaSb Type...
Proceedings of SPIE (September 08 2011)

Back to Top