Paper
30 January 2012 High-power sweeping semiconductor light sources at 840 nm with up to 100 nm tuning range
V. R. Shidlovskii, S. N. Ilchenko, A. A. Lobintsov, M. V. Shramenko, S. D. Yakubovich
Author Affiliations +
Abstract
We report all-PM-fiber ring external cavity, extremely wide tunable/swept lasers and MOPA sources basing on a newly developed SOAs and acousto-optic filter. Tuning ranges of 100 nm, 90 nm and 70 nm have been achieved at output powers of 1.0 mW, 5.0 mW and 10.0 mW, respectively. Instantaneous linewidth below 0.04 nm and sweeping rate up to 104 nm/s had been demonstrated. Power boosting up to 50 mW (PMF) and up to 250 mW (MMF) with tunability of around 50 nm had been also demonstrated by using MOPA systems basing on developed laser and different types of boosting SOAs.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. R. Shidlovskii, S. N. Ilchenko, A. A. Lobintsov, M. V. Shramenko, and S. D. Yakubovich "High-power sweeping semiconductor light sources at 840 nm with up to 100 nm tuning range", Proc. SPIE 8213, Optical Coherence Tomography and Coherence Domain Optical Methods in Biomedicine XVI, 82133A (30 January 2012); https://doi.org/10.1117/12.905989
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Laser development

Light sources

Optical coherence tomography

Phase modulation

Quantum wells

Fabry–Perot interferometers

Semiconductors

Back to Top