Raman And RBS Studies Of Ion Implanted Semiconductors

R. c. Bowman Jr.; D. N. Jamieson

doi:10.1117/12.941931

19 January 1988 Raman And RBS Studies Of Ion Implanted Semiconductors

R. c. Bowman Jr., D. N. Jamieson

Proceedings Volume 0822, Raman and Luminescence Spectroscopy in Technology; (1988) https://doi.org/10.1117/12.941931
Event: 31st Annual Technical Symposium on Optical and Optoelectronic Applied Sciences and Engineering, 1987, San Diego, CA, United States

Abstract

Raman spectroscopy and Rutherford backscattering spectrometry (RBS) have been used to assess boron and silicon implants on the properties of single crystal silicon, GaAs, and CdTe. The behavior of these different semiconductors under identical implant conditions has been compared. Changes in the Raman optic phonon spectra reflect the extent of lattice damage caused by the ion implants as well as ability of various annealing procedures to remove this damage. The Raman results are generally confirmed by PBS ion-channeling measurements. Furthermore, these techniques are shown to provide complementary information on the distribution and nature of implant damage.

Citation Download Citation

R. c. Bowman Jr. and D. N. Jamieson "Raman And RBS Studies Of Ion Implanted Semiconductors", Proc. SPIE 0822, Raman and Luminescence Spectroscopy in Technology, (19 January 1988); https://doi.org/10.1117/12.941931

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available