Realization of a photonic crystal surface emitting laser through GaAs based regrowth

David M. Williams; Kristian M. Groom; David T. D. Childs; Ben J. Stevens; Salam Khamas; Tim S. Roberts; Richard J. E. Taylor; Richard A. Hogg; Naoki Ikeda; Yoshimasa Sugimoto

doi:10.1117/12.908373

28 February 2012 Realization of a photonic crystal surface emitting laser through GaAs based regrowth

David M. Williams, Kristian M. Groom, David T. D. Childs, Ben J. Stevens, Salam Khamas, Tim S. Roberts, Richard J. E. Taylor, Richard A. Hogg, Naoki Ikeda, Yoshimasa Sugimoto

Author Affiliations +

Proceedings Volume 8255, Physics and Simulation of Optoelectronic Devices XX; 82550Z (2012) https://doi.org/10.1117/12.908373
Event: SPIE OPTO, 2012, San Francisco, California, United States

Abstract

Recently, there has been much interest in a novel type of device, the 2D photonic crystal surface emitting laser (PCSEL). For commercialization of these devices a robust and high reliability manufacturing method is required. Previous GaAs wafer fusion and GaN regrowth techniques have utilised voids within the photonic crystal which suffer from reliability and reproducibility issues. We demonstrate a GaAs based PCSEL structure which uses epitaxial regrowth to completely infill the etched structure. We discuss the design, epitaxy, and operating characteristics of these devices over a range of temperatures.

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David M. Williams, Kristian M. Groom, David T. D. Childs, Ben J. Stevens, Salam Khamas, Tim S. Roberts, Richard J. E. Taylor, Richard A. Hogg, Naoki Ikeda, and Yoshimasa Sugimoto "Realization of a photonic crystal surface emitting laser through GaAs based regrowth", Proc. SPIE 8255, Physics and Simulation of Optoelectronic Devices XX, 82550Z (28 February 2012); https://doi.org/10.1117/12.908373

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