Pyramid nano-voids in GaN and InGaN

A. B. Yankovich; A. V. Kvit; H. Y. Liu; X. Li; F. Zhang; V. Avrutin; N. Izyumskaya; Ü. Özgür; H. Morkoc; P. M. Voyles

doi:10.1117/12.912097

22 February 2012 Pyramid nano-voids in GaN and InGaN

A. B. Yankovich, A. V. Kvit, H. Y. Liu, X. Li, F. Zhang, V. Avrutin, N. Izyumskaya, Ü. Özgür, H. Morkoc, P. M. Voyles

Proceedings Volume 8262, Gallium Nitride Materials and Devices VII; 826205 (2012) https://doi.org/10.1117/12.912097
Event: SPIE OPTO, 2012, San Francisco, California, United States

Abstract

High resolution transmission electron microscopy and aberration-corrected scanning transmission electron microscopy (STEM) reveal a new void defect in GaN, Si-doped GaN, and InGaN. The voids are pyramid shaped with symmetric hexagonal {0001} base facets and {10^-11} side facets. The pyramid void has a closed or open core dislocation at the peak of the pyramid, which continues up along the [0001] growth direction. The closed dislocations have a 1/3 11^-20 edge dislocation Burgers vector component, consistent with known threading dislocations. The open core dislocations are hexagonal shaped with pure screw character, {10^-10} side facets, varying lateral widths, and varying degrees of hexagonal symmetry. STEM electron energy loss spectroscopy spectrum imaging revealed a larger C concentration inside the void and below the void than above the void. We propose that carbon deposition during metal organic chemical vapor deposition growth acts as a mask, stopping the GaN deposition locally. Subsequent layers of GaN deposited around the C covered region create the overhanging {10^-11} facets, and the meeting of the six {10^-11} facets at the pyramid's peak is not perfect, resulting in a dislocation.

Citation Download Citation

A. B. Yankovich, A. V. Kvit, H. Y. Liu, X. Li, F. Zhang, V. Avrutin, N. Izyumskaya, Ü. Özgür, H. Morkoc, and P. M. Voyles "Pyramid nano-voids in GaN and InGaN", Proc. SPIE 8262, Gallium Nitride Materials and Devices VII, 826205 (22 February 2012); https://doi.org/10.1117/12.912097

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