Concentrating properties of nitride-based solar cells using GaInN/GaInN superlattices

M. Mori; S. Yamamoto; Y. Kuwahara; T. Fujii; T. Sugiyama; M. Iwaya; T. Takeuchi; S. Kamiyama; I. Akasaki; H. Amano

doi:10.1117/12.908226

27 February 2012 Concentrating properties of nitride-based solar cells using GaInN/GaInN superlattices

M. Mori, S. Yamamoto, Y. Kuwahara, T. Fujii, T. Sugiyama, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, H. Amano

Proceedings Volume 8262, Gallium Nitride Materials and Devices VII; 82620Z (2012) https://doi.org/10.1117/12.908226
Event: SPIE OPTO, 2012, San Francisco, California, United States

Abstract

We investigated the concentrating properties of nitride based solar cells at light intensities of up to 200 suns at room temperature. The devices were GaInN-based solar cells with a GaInN/GaInN superlattice active layer on a freestanding GaN substrate. The conversion efficiency of these solar cells increased with increasing of concentration up to 200 suns. We obtained the solar cells with a pit-free structure and up to 3.4% conversion efficiency by irradiating concentrated sunlight with intensities of up to 200 suns. The short-circuit current density, open-circuit voltage, fill factor, and conversion efficiency were 510 mA/cm², 1.9 V, 70%, and 3.4%, respectively, under an air mass 1.5G at 200 suns and room temperature. We also discuss the relationship between crystal quality and solar cell performance.

Citation Download Citation

M. Mori, S. Yamamoto, Y. Kuwahara, T. Fujii, T. Sugiyama, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano "Concentrating properties of nitride-based solar cells using GaInN/GaInN superlattices", Proc. SPIE 8262, Gallium Nitride Materials and Devices VII, 82620Z (27 February 2012); https://doi.org/10.1117/12.908226

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