High efficiency InGaN solar cell with a graded p-InGaN top layer

Nobuhiko Sawaki; Tomoki Fujisawa

doi:10.1117/12.905531

27 February 2012 High efficiency InGaN solar cell with a graded p-InGaN top layer

Nobuhiko Sawaki, Tomoki Fujisawa

Proceedings Volume 8262, Gallium Nitride Materials and Devices VII; 826210 (2012) https://doi.org/10.1117/12.905531
Event: SPIE OPTO, 2012, San Francisco, California, United States

Abstract

A new device structure was investigated numerically to improve the conversion efficiency of a single junction p- InGaN/n-InGaN solar cell, where the energy band gap of the p-type top layer was increased gradually by varying the In composition during the growth. The gradual increase of the band gap generates a built in electric filed in the p-type top layer which accelerates drift motion of photo-excited electrons. Numerical results showed that more than one order of magnitude enhancement of the photo-current is achieved by the built in electric field as high as 100V/cm.

Citation Download Citation

Nobuhiko Sawaki and Tomoki Fujisawa "High efficiency InGaN solar cell with a graded p-InGaN top layer", Proc. SPIE 8262, Gallium Nitride Materials and Devices VII, 826210 (27 February 2012); https://doi.org/10.1117/12.905531

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