Impact of indium surface segregation on optical properties of ultrathin InGaN/GaN quantum wells

Mykhaylo V. Klymenko; Igor A. Sukhoivanov; Oleksiy V. Shulika

doi:10.1117/12.909423

27 February 2012 Impact of indium surface segregation on optical properties of ultrathin InGaN/GaN quantum wells

Mykhaylo V. Klymenko, Igor A. Sukhoivanov, Oleksiy V. Shulika

Proceedings Volume 8262, Gallium Nitride Materials and Devices VII; 82621T (2012) https://doi.org/10.1117/12.909423
Event: SPIE OPTO, 2012, San Francisco, California, United States

Abstract

We investigate theoretically the influence of indium surface segregation in InGaN/GaN single quantum wells on its optical properties. Obtained results show that the influence of the surface segregation on the dipole matrix element is not equal for all optical transition. This effect results from the joint action of the piezoelectric polarization and indium surface segregation which change selection rules. Quantum well structures having different indium amount are analyzed and found that the influence of the indium surface segregation on absorption spectra is more pronounced in quantum well structures with high indium amount.

Citation Download Citation

Mykhaylo V. Klymenko, Igor A. Sukhoivanov, and Oleksiy V. Shulika "Impact of indium surface segregation on optical properties of ultrathin InGaN/GaN quantum wells", Proc. SPIE 8262, Gallium Nitride Materials and Devices VII, 82621T (27 February 2012); https://doi.org/10.1117/12.909423

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