Paper
27 February 2012 Effects of polarization fields on avalanche breakdown of AlGaN quantum-well photodiode
Sheng-Kun Zhang, Wubao Wang, Robert R. Alfano, Amir M. Dabiran, Andrew M. Wowchak, Peter P. Chow
Author Affiliations +
Abstract
Polarization-induced electric fields in AlGaN quantum wells have important effects on avalanche breakdown of AlGaN quantum-well photodiodes. When the polarization-induced fields within the AlGaN well layers have the same direction as applied electric field, they can help enhance impact ionization rate and decrease threshold voltage of avalanche breakdown of AlGaN avalanche photodiodes. However, according to previous research on avalanche breakdown of AlGaN photodiodes, no distinct breakdown threshold was observed from current-voltage curve. Instead, a soft avalanche breakdown was observed across applied voltage ranging from zero to a few volts while electroluminescence spectra show a threshold of about 10 V for avalanche breakdown. In this work, by considering impact ionization of defect levels and carrier screening effect, impact ionization coefficients are calculated as functions of applied voltage and the soft breakdown is well explained. It is also found that strong carrier screening effect will decrease impact ionization rate in a certain range of voltage thus affecting device performance.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sheng-Kun Zhang, Wubao Wang, Robert R. Alfano, Amir M. Dabiran, Andrew M. Wowchak, and Peter P. Chow "Effects of polarization fields on avalanche breakdown of AlGaN quantum-well photodiode", Proc. SPIE 8262, Gallium Nitride Materials and Devices VII, 826227 (27 February 2012); https://doi.org/10.1117/12.910189
Lens.org Logo
CITATIONS
Cited by 1 scholarly publication.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Ionization

Photodiodes

Polarization

Avalanche photodetectors

Quantum wells

Gallium nitride

Ultraviolet radiation

RELATED CONTENT

III-nitride avalanche photodiodes
Proceedings of SPIE (February 02 2007)
Photodetectors: UV to IR
Proceedings of SPIE (August 14 2003)
A dual-band UV and IR quantum cascade photodetector
Proceedings of SPIE (November 28 2011)
Advances in UV sensitive visible blind GaN-based APDs
Proceedings of SPIE (January 24 2011)

Back to Top