Paper
8 February 2012 Numerical studies of thermal lensing effects on high-CW-power single-spatial- mode diode lasers
Author Affiliations +
Proceedings Volume 8277, Novel In-Plane Semiconductor Lasers XI; 82771G (2012) https://doi.org/10.1117/12.907212
Event: SPIE OPTO, 2012, San Francisco, California, United States
Abstract
Three-dimensional (3-D) above-threshold analyses have been performed on laterally antiguided laser structures operated on leaky modes and twin-waveguide structures operated on guided modes for generating watt-range CW powers in a single, stable spatial mode. The 3-D numerical code takes into account carrier diffusion in the quantum well, thermooptic effects as well as edge radiation losses. Additionally, higher-order optical modes on a 'frozen background' provided by the fundamental mode operation are computed by the Arnoldi algorithm. Approaching the threshold for a competing higher-order mode puts a limit on the range for stable, single-mode operation. The modal structure and stability for both device types are studied over a wide range of the active core width and widths of the buried waveguides bordering the low-index device core. The numerical analyses results indicate an essential role of thermal lensing in transformations of optical-modes shapes and in mode stability loss with the drive current increase. The CW operation in a stable, single spatial mode to powers as high as 2 W is predicted for 2-mm length lasers operated on leaky modes. The maximum CW power in single-guided-mode is predicted as high as 2.46 W for 2-mm length and 3.4 W for 3-mm length devices.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Anatoly P. Napartovich, Nikolay N. Elkin, Dmitry V. Vysotsky, Dan Botez, and Luke J. Mawst "Numerical studies of thermal lensing effects on high-CW-power single-spatial- mode diode lasers", Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 82771G (8 February 2012); https://doi.org/10.1117/12.907212
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KEYWORDS
Thermal effects

Quantum wells

Waveguides

Semiconductor lasers

Continuous wave operation

Refractive index

Diffusion

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