Paper
23 March 2012 Calibration and verification of a stochastic model for EUV resist
Author Affiliations +
Abstract
Line width roughness remains a critical issue when moving towards smaller feature sizes in EUV lithography. We present a stochastic resist modeling approach to accurately predict LWR and CD simultaneously. The stochastic model simulates the roughness effects due to the shot noise and secondary electron effects during exposure, and the interaction amongst the finite number of chemical molecules (inhibitor, PAG, quencher) during PEB. The model calibration used the imec baseline EUV resist (Shinetsu SEVR140) with over 250 measured CDs and corresponding line width roughness data. The validation was performed with 1D and 2D patterns. Especially for contact holes the predictability regarding local CD uniformity is discussed. The good match between the simulations and wafer results for SRAM patterns further exhibits the predictive power of the model. The model has been applied to simulate the new ASML NXE: 3100 EUV conditions for both thin and thick absorber EUV masks. The comparison between the simulation results and wafer data are reported.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Weimin Gao, Alexander Philippou, Ulrich Klostermann, Joachim Siebert, Vicky Philipsen, Eric Hendrickx, Tom Vandeweyer, and Gian Lorusso "Calibration and verification of a stochastic model for EUV resist", Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 83221D (23 March 2012); https://doi.org/10.1117/12.917804
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Cited by 23 scholarly publications.
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KEYWORDS
Line width roughness

Calibration

Data modeling

Stochastic processes

Extreme ultraviolet

Semiconducting wafers

Photomasks

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