Advanced multi-patterning using resist core spacer process for 22nm node and beyond

Yuhei Kuwahara; Satoru Shimura; Hideharu Kyouda; Kenichi Oyama; Shohei Yamauchi; Arisa Hara; Sakurako Natori; Hidetami Yaegashi

doi:10.1117/12.916327

20 March 2012 Advanced multi-patterning using resist core spacer process for 22nm node and beyond

Yuhei Kuwahara, Satoru Shimura, Hideharu Kyouda, Kenichi Oyama, Shohei Yamauchi, Arisa Hara, Sakurako Natori, Hidetami Yaegashi

Author Affiliations +

Proceedings Volume 8325, Advances in Resist Materials and Processing Technology XXIX; 832528 (2012) https://doi.org/10.1117/12.916327
Event: SPIE Advanced Lithography, 2012, San Jose, California, United States

Abstract

Self-aligned double patterning (SADP) such as multi-patterning process seems to be the most promising technology for 22nm node devices and beyond. In recent years, in order to further scaling, other multi-patterning processes such as self-aligned triple patterning (SATP) and self-aligned quadruple patterning (SAQP) have also been studied. However, process cost and CD controllability are major challenges since multi-patterning technology utilizes spacer processes which-requires a larger number of etching and deposition process steps. And then we began to study the simplified spacer process using resist core and we verified its process performance (Process window, LWR) This paper reports on the results of a comprehensive process evaluation of multi-patterning technology using lithography clusters, etching and deposition tools.

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Yuhei Kuwahara, Satoru Shimura, Hideharu Kyouda, Kenichi Oyama, Shohei Yamauchi, Arisa Hara, Sakurako Natori, and Hidetami Yaegashi "Advanced multi-patterning using resist core spacer process for 22nm node and beyond", Proc. SPIE 8325, Advances in Resist Materials and Processing Technology XXIX, 832528 (20 March 2012); https://doi.org/10.1117/12.916327

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