Paper
31 May 2012 Novel uncooled detector based on gallium nitride micromechanical resonators
Vikrant J. Gokhale, Yu Sui, Mina Rais-Zadeh
Author Affiliations +
Abstract
This work presents measured results demonstrating an uncooled infrared (IR) detector based on gallium nitride (GaN) micromechanical resonators. GaN-based photonic detectors are typically designed to operate in the ultraviolet (UV) regime as the absorption spectrum of wide-band gap GaN peaks at a wavelength of ~360 nm. In contrast, the transduction mechanism of the device presented in this work is the pyroelectric perturbation of a GaN micromechanical resonator, allowing the detection of radiation in the IR regime. IR radiation within the absorption spectrum of the resonating stack material (mainly the IR absorber) is converted into heat causing pyroelectric charge release, which in turn shifts the resonant frequency via changes in the acoustic velocity of GaN. A thin-film IR absorber based on carbon-nanotube nanocomposite is proposed, which offers IR absorptivity of more than 95%. As a proof of concept, we demonstrate a GaN resonant detector operated at 119 MHz, which exhibits an IR sensitivity of ~4 Hz/10nW.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vikrant J. Gokhale, Yu Sui, and Mina Rais-Zadeh "Novel uncooled detector based on gallium nitride micromechanical resonators", Proc. SPIE 8353, Infrared Technology and Applications XXXVIII, 835319 (31 May 2012); https://doi.org/10.1117/12.920450
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Cited by 20 scholarly publications and 1 patent.
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KEYWORDS
Gallium nitride

Resonators

Sensors

Infrared radiation

Thermography

Infrared sensors

Infrared detectors

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