Effect Of Crossed Eleotric And Magnetic Fields On The Gate Capacitance Of MOS Structures Of N--Channel Inversion Layers Of Ternary Semiconductors

K. P. Ghatak; N. Chattopadhyay; S. N. Biswas

doi:10.1117/12.967530

1 January 1987 Effect Of Crossed Eleotric And Magnetic Fields On The Gate Capacitance Of MOS Structures Of N--Channel Inversion Layers Of Ternary Semiconductors

K. P. Ghatak, N. Chattopadhyay, S. N. Biswas

Author Affiliations +

Proceedings Volume 0836, Optoelectronic Materials, Devices, Packaging, and Interconnects; (1987) https://doi.org/10.1117/12.967530
Event: Cambridge Symposium on Fiber Optics and Integrated Optoelectronics, 1987, Cambridge, MA, United States

Abstract

It is well-known that the gate capacitance of MOS structures of n-channel inversion layers on small-gap semiconductors is very important parameter since the MOS capacitance can be very easily controlled by varying the gate voltage and also since it explores various other fundamental features of semconductor surfaces in MOS structures. However, the gate capacitance of MOS structures of n-channel inversion layers on ternary semiconductors in the presence of crossed electric and magnetic fields has yet to be investigated since the cross-field configuration is of fundamental importance for classical and quantum transport phenomena.

Citation Download Citation

K. P. Ghatak, N. Chattopadhyay, and S. N. Biswas "Effect Of Crossed Eleotric And Magnetic Fields On The Gate Capacitance Of MOS Structures Of N--Channel Inversion Layers Of Ternary Semiconductors", Proc. SPIE 0836, Optoelectronic Materials, Devices, Packaging, and Interconnects, (1 January 1987); https://doi.org/10.1117/12.967530

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