Mobility spectrum analysis of ion-etching-induced p-to-n type converted layers in HgCdTe single crystal

Guoqing Xu; Xiangyang Liu; Kefeng Zhang; Hui Qiao; Jia Jia; Xiangyang Li

doi:10.1117/12.975806

15 October 2012 Mobility spectrum analysis of ion-etching-induced p-to-n type converted layers in HgCdTe single crystal

Guoqing Xu, Xiangyang Liu, Kefeng Zhang, Hui Qiao, Jia Jia, Xiangyang Li

Proceedings Volume 8419, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy; 841912 (2012) https://doi.org/10.1117/12.975806
Event: 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies (AOMATT 2012), 2012, Xiamen, China

Abstract

In this paper, we study the magneto-transport properties of ion-etching-induced p-to-n type converted layers in Hg₁- _xCd_xTe (x=0.24) single crystal with the help of mobility spectrum analysis (MSA) technique. Hall measurement shows that the residual p-HgCdTe completely converted to n-type after ion etching. By step-by-step chemical etching, MSA reveals that ion-etching-induced conversion results in a damaged surface layer with low electron mobility while a bulk n-type region exhibits higher electron mobility. It can be observed that the mobility of the surface electrons is independence of temperature in the measured temperature range. In contrast, the bulk electrons exhibit classical behavior of n-HgCdTe with characteristics that are strongly dependence on temperature. The Hall data from different thickness shows the bulk n-layer is uniform with high mobility and lower concentration.

Citation Download Citation

Guoqing Xu, Xiangyang Liu, Kefeng Zhang, Hui Qiao, Jia Jia, and Xiangyang Li "Mobility spectrum analysis of ion-etching-induced p-to-n type converted layers in HgCdTe single crystal", Proc. SPIE 8419, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy, 841912 (15 October 2012); https://doi.org/10.1117/12.975806

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