A silicon photonic quasi-crystal structure obtained by interference lithography

S. Lis; A. Zakrzewski; J. Gryglewicz; W. Oleszkiewicz; S. Patela

doi:10.1117/12.922314

25 April 2012 A silicon photonic quasi-crystal structure obtained by interference lithography

S. Lis, A. Zakrzewski, J. Gryglewicz, W. Oleszkiewicz, S. Patela

Proceedings Volume 8425, Photonic Crystal Materials and Devices X; 84251T (2012) https://doi.org/10.1117/12.922314
Event: SPIE Photonics Europe, 2012, Brussels, Belgium

Abstract

Photonic quasi-crystal structures have been prepared and investigated. Symmetrical patterns were fabricated by interference lithography in negative tone photoresist and transferred to silicon by reactive ion etching. Theoretical influences of pattern detail (radius of hole) on the photonic band gap have been studied. Three types of 2D photonic quasi-crystals have been prepared: 8-fold, 10-fold and 12-fold pattern. Finally, finite-difference time-domain method was used for theoretically prediction of transmission spectrum for fabricated 12-fold quasi-crystal.

Citation Download Citation

S. Lis, A. Zakrzewski, J. Gryglewicz, W. Oleszkiewicz, and S. Patela "A silicon photonic quasi-crystal structure obtained by interference lithography", Proc. SPIE 8425, Photonic Crystal Materials and Devices X, 84251T (25 April 2012); https://doi.org/10.1117/12.922314

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