Ring resonator silicon optical modulator based on interleaved PN junctions

Melissa Ziebell; Delphine Marris-Morini; Gilles Rasigade; Jean-Marc Fédéli; Eric Cassan; Laurent Vivien

doi:10.1117/12.922936

10 May 2012 Ring resonator silicon optical modulator based on interleaved PN junctions

Melissa Ziebell, Delphine Marris-Morini, Gilles Rasigade, Jean-Marc Fédéli, Eric Cassan, Laurent Vivien

Proceedings Volume 8431, Silicon Photonics and Photonic Integrated Circuits III; 84310J (2012) https://doi.org/10.1117/12.922936
Event: SPIE Photonics Europe, 2012, Brussels, Belgium

Abstract

We present first experimental results of a high-speed silicon optical modulator based on carrier depletion in interleaved PN junctions oriented in the waveguide direction. The modulator is integrated in a ring resonator of radius 50 μm. The modulator is characterized using a laser beam at 1.55 μm for TE and TM polarizations, and extinction ratios as high as 11 dB and 10 dB in in TE- and TM-polarizations, respectively, obtained between 0 and -10 V. At 10 Gbit/s extinction ratios of 4.1 dB and 2.7 dB for TE- and TM-polarization, respectively, are experimentally demonstrated.

Citation Download Citation

Melissa Ziebell, Delphine Marris-Morini, Gilles Rasigade, Jean-Marc Fédéli, Eric Cassan, and Laurent Vivien "Ring resonator silicon optical modulator based on interleaved PN junctions", Proc. SPIE 8431, Silicon Photonics and Photonic Integrated Circuits III, 84310J (10 May 2012); https://doi.org/10.1117/12.922936

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