Paper
10 May 2012 Approximate model of a DBR/F-P laser based on Raman effect in a silicon-on-insulator rib waveguide
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Abstract
An approximate method of modeling of Raman generation in silicon-on-insulator(SOI) rib waveguide with DBR/F-P resonator including nonlinear effects such as Raman amplification and free-carrier absorption (FCA), is presented. In our detailed theoretical model, we consider coupled set of differential equations for pump signal and Stokes signal inside the laser cavity. In threshold analysis of steady-state Raman laser operation, we assume that the pump signal distribution is determined from linear equations. An analytical formula relating threshold pump power to the system parameters is obtained. The analysis of the above threshold operation is based on an energy theorem and threshold field approximation. In exact energy conservation relation, we approximate the pump and Stokes field distributions by these proportional to linear field distribution existing at the threshold, obtaining an approximate, semi-analytical expression related the Raman output power (i.e. the output power of Stokes lasing) to the pump power and system parameters. With this formula, the laser characteristics revealing the optimal rib waveguide geometry and the optimal coupling coefficients, which provide the maximal power efficiency, can be obtained.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Anna Tyszka-Zawadzka, Pawel Szczepanski, Miroslaw Karpierz, Agnieszka Mossakowska-Wyszynska, and Mateusz Bugaj "Approximate model of a DBR/F-P laser based on Raman effect in a silicon-on-insulator rib waveguide", Proc. SPIE 8431, Silicon Photonics and Photonic Integrated Circuits III, 84311X (10 May 2012); https://doi.org/10.1117/12.922429
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Cited by 1 scholarly publication.
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KEYWORDS
Raman spectroscopy

Waveguides

Laser damage threshold

Raman scattering

Silicon

Reflectivity

Laser resonators

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