Paper
10 May 2012 High performance identical layer InGaAlAs-MQW 1300nm electroabsorption-modulated DFB-lasers for 4x25Gbit/s
Holger Klein, Carsten Bornholdt, Georges Przyrembel, Ariane Sigmund, Wolf-Dietrich Molzow, Martin Moehrle
Author Affiliations +
Abstract
We have developed electroabsorption modulated ridge waveguide-based DFB Lasers for 4x25Gbit/s that comply with the IEEE 100GBASE-ER4 Standard for 100Gbit-Ethernet. An identical InGaAlAs MQW layer stack is used in the DFB and the EAM section. Devices from a single wafer show excellent 25Gbit/s modulation performance at all four wavelengths with dynamic extinction ratios exceeding 9dB. All devices have facet output powers over +2.5dBm and are operated semi-cooled at 45°C.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Holger Klein, Carsten Bornholdt, Georges Przyrembel, Ariane Sigmund, Wolf-Dietrich Molzow, and Martin Moehrle "High performance identical layer InGaAlAs-MQW 1300nm electroabsorption-modulated DFB-lasers for 4x25Gbit/s", Proc. SPIE 8432, Semiconductor Lasers and Laser Dynamics V, 84321F (10 May 2012); https://doi.org/10.1117/12.946604
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Electrodes

Modulation

Standards development

Waveguides

Eye

Photomasks

Semiconducting wafers

Back to Top