Carrier escape from ground state and non-zero resonance frequency at low bias powers for semiconductor quantum-dot lasers

C. Wang; F. Grillot; J. Even

doi:10.1117/12.946053

11 May 2012 Carrier escape from ground state and non-zero resonance frequency at low bias powers for semiconductor quantum-dot lasers

C. Wang, F. Grillot, J. Even

Author Affiliations +

Proceedings Volume 8432, Semiconductor Lasers and Laser Dynamics V; 843225 (2012) https://doi.org/10.1117/12.946053
Event: SPIE Photonics Europe, 2012, Brussels, Belgium

Abstract

The three-dimensional confinement of electrons and holes in the semiconductor quantum dot (QD) structure profoundly changes its density of states compared to the bulk semiconductor or the thin-film quantum well (QW) structure. The aim of this paper is to theoretically investigate the microwave properties of InAs/InP(311B) QD lasers. A new expression of the modulation transfer function is derived for the analysis of QD laser modulation properties based on a set of four rate equations. Analytical calculations point out that carrier escape from ground state (GS) to excited state (ES) induces a non-zero resonance frequency at low bias powers. Calculations also show that the carrier escape leads to a larger damping factor offset as compared to conventional QW lasers. These results are of prime importance for a better understanding of the carrier dynamics in QD lasers as well as for further optimization of low cost sources for optical telecommunications.

Citation Download Citation

C. Wang, F. Grillot, and J. Even "Carrier escape from ground state and non-zero resonance frequency at low bias powers for semiconductor quantum-dot lasers", Proc. SPIE 8432, Semiconductor Lasers and Laser Dynamics V, 843225 (11 May 2012); https://doi.org/10.1117/12.946053

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