Tales of scales: how to enable backup process tool qualification for high-end photomasks

G. R. Cantrell; Christian Bürgel; Martin Sczyrba; Jan Heumann; Stefan Meusemann; Clemens Utzny

doi:10.1117/12.964671

29 June 2012 Tales of scales: how to enable backup process tool qualification for high-end photomasks

G. R. Cantrell, Christian Bürgel, Martin Sczyrba, Jan Heumann, Stefan Meusemann, Clemens Utzny

Proceedings Volume 8441, Photomask and Next-Generation Lithography Mask Technology XIX; 844103 (2012) https://doi.org/10.1117/12.964671
Event: Photomask and NGL Mask Technology XIX, 2012, Yokohama, Japan

Abstract

Strict reticle critical dimension (CD) control is needed to supply ≤ 20nm wafer technology nodes. In front end lithographic processes for example, precise temperature control in resist baking steps is considered paramount to limiting reticle CD error sources. Additionally, current density during writing and focus are continuously tracked in 50kV e-beam pattern generators (PG) in order to provide stable CD performance. Despite these strict controls (and many others), feedback compensation strategies are increasingly utilized in mask manufacturing to reach < 2nm 3σ CD uniformity (CDU). Such compensations require stable reticle CD signatures which can be problematic when alternate or backup process tools are employed. The AMTC has applied principle component analysis (PCA) to resist CD measurements of 50kV test reticles fabricated with chemically amplified resists (CAR) in order to quantify the resist CDU capabilities of front and backup lithographic process tools. PCA results elucidate significant resist CDU differences between similar lithographic process tools that are considered well matched via CDU 3σ comparisons. The utility of PCA relies on the statistical analysis of large data sets however, reticle CD sampling is typically sparse, on the 10^-2 m or centimeter (cm) scale using conventional scanning electron microscopes (CD SEM). Higher CD spatial resolutions can be achieved using advanced inspection tools, which provide CD data on a substantially smaller length scale (10^-4 m), thus yielding a considerably larger CD snapshot for front/backup process tool comparisons. Combining PCA analysis with high spatial resolution CD data provides novel insights into the opportunities for tool and process CD capabilities.

Citation Download Citation

G. R. Cantrell, Christian Bürgel, Martin Sczyrba, Jan Heumann, Stefan Meusemann, and Clemens Utzny "Tales of scales: how to enable backup process tool qualification for high-end photomasks", Proc. SPIE 8441, Photomask and Next-Generation Lithography Mask Technology XIX, 844103 (29 June 2012); https://doi.org/10.1117/12.964671

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
12 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Critical dimension metrology

Photoresist processing

Reticles

Photomasks

Principal component analysis

Inspection

Scanning electron microscopy

Show All Keywords

Keywords/Phrases

Search In:

Publication Years