Paper
29 June 2012 Photomask repair technology by using gas field ion source
Fumio Aramaki, Tomokazu Kozakai, Osamu Matsuda, Osamu Takaoka, Yasuhiko Sugiyama, Hiroshi Oba, Kazuo Aita, Anto Yasaka
Author Affiliations +
Abstract
Recently, most of defects on high-end masks are repaired with electron beam (EB). The minimum repairable dimension of the current state-of-the-art repair systems is about 20-30 nm, but that dimension is not small enough to repair the next generation masks. Meanwhile, new molybdenum silicide (MoSi) films with high cleaning durability are going to be provided for an alternative technology, but the etching selectivity between new MoSi and quartz under EB repair process is not high enough to control etching depth. We developed the focused ion beam (FIB) technology that uses light ions emitted from a gas field ion source (GFIS). In this study, the performance of our developed GFIS mask repair system was investigated by using new MoSi (HOYA-A6L2). Specifically, the minimum repairable dimension, image resolution, imaging damage, etching material selectivity and through-focus behavior on AIMS were evaluated. The minimum repairable dimension was only 11 nm that is nearly half of that with EB. That result suggests that GFIS technology is a promising candidate for repairing the next generation masks. Meanwhile, the etching selectivity between A6L2 and quartz was 6:1. Additionally, the other evaluations on AIMS showed good results. Those results demonstrate that GFIS technology is a reliable solution of repairing new MoSi masks with high cleaning durability.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Fumio Aramaki, Tomokazu Kozakai, Osamu Matsuda, Osamu Takaoka, Yasuhiko Sugiyama, Hiroshi Oba, Kazuo Aita, and Anto Yasaka "Photomask repair technology by using gas field ion source", Proc. SPIE 8441, Photomask and Next-Generation Lithography Mask Technology XIX, 84410D (29 June 2012); https://doi.org/10.1117/12.981167
Lens.org Logo
CITATIONS
Cited by 10 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Etching

Critical dimension metrology

Photomasks

Ions

Quartz

Atomic force microscopy

Image resolution

RELATED CONTENT


Back to Top