Development of novel projection electron microscopy (PEM) system for EUV mask inspection

Masahiro Hatakeyama; Takeshi Murakami; Tsutomu Karimata; Kenji Watanabe; Yoshihiko Naito; Tsuyoshi Amano; Ryoichi Hirano; Susumu Iida; Hidehiro Watanabe; Tsuneo Terasawa

doi:10.1117/12.978633

29 June 2012 Development of novel projection electron microscopy (PEM) system for EUV mask inspection

Masahiro Hatakeyama, Takeshi Murakami, Tsutomu Karimata, Kenji Watanabe, Yoshihiko Naito, Tsuyoshi Amano, Ryoichi Hirano, Susumu Iida, Hidehiro Watanabe, Tsuneo Terasawa

Author Affiliations +

Proceedings Volume 8441, Photomask and Next-Generation Lithography Mask Technology XIX; 844116 (2012) https://doi.org/10.1117/12.978633
Event: Photomask and NGL Mask Technology XIX, 2012, Yokohama, Japan

Abstract

In order to realize pattern defect inspection for 1Xnm EUV mask, we are developing a novel projection electron microscopy (PEM) system; which enables us to make the inspection in high resolution and high speed as compared with conventional DUV and EB inspection systems. In this paper, we have cleared how progress is needed to the decided specification target, e.g., sensitivity of 16nm size in pattern defect and inspection speed of 19 hours/100mm square, as compared to the current PEM optics performance. Then, to achieve the progress, we made a new design concept, i.e., a novel PEM optics employing high electron energy as compared to the current PEM optics, and verifying the concept by using numerical estimations. The results show that the novel PEM optics design concept is capable to meet the progress and the target for 1Xnm EUV mask.

Citation Download Citation

Masahiro Hatakeyama, Takeshi Murakami, Tsutomu Karimata, Kenji Watanabe, Yoshihiko Naito, Tsuyoshi Amano, Ryoichi Hirano, Susumu Iida, Hidehiro Watanabe, and Tsuneo Terasawa "Development of novel projection electron microscopy (PEM) system for EUV mask inspection", Proc. SPIE 8441, Photomask and Next-Generation Lithography Mask Technology XIX, 844116 (29 June 2012); https://doi.org/10.1117/12.978633

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