Far ultraviolet sensitivity of silicon CMOS sensors

Michael W. Davis; Thomas K. Greathouse; Kurt D. Retherford; Gregory S. Winters; Yibin Bai; James W. Beletic

doi:10.1117/12.926677

25 September 2012 Far ultraviolet sensitivity of silicon CMOS sensors

Michael W. Davis, Thomas K. Greathouse, Kurt D. Retherford, Gregory S. Winters, Yibin Bai, James W. Beletic

Proceedings Volume 8453, High Energy, Optical, and Infrared Detectors for Astronomy V; 845308 (2012) https://doi.org/10.1117/12.926677
Event: SPIE Astronomical Telescopes + Instrumentation, 2012, Amsterdam, Netherlands

Abstract

We describe vacuum ultraviolet sensitivity measurements of a new high performance silicon-based CMOS sensor from Teledyne Imaging Sensors. These sensors do not require the high voltages of MCP detectors, making them a lower mass and power alternative to the more mature MCP technology. These devices demonstrate up to 40 percent quantum efficiency at vacuum ultraviolet wavelengths, either meeting or greatly exceeding 10 percent quantum efficiency across the entire 100-200 nm wavelength region. As with similar visible sensitive devices, backside illumination results in a higher quantum efficiency than frontside illumination. Measurements of the vacuum ultraviolet sensitivity of the Teledyne silicon PIN detectors were made by directing a known intensity of ultraviolet light at discrete wavelengths onto the test detectors and reading out the resulting photocurrent. The sensitivity of the detector at a given wavelength was then calculated from the intensity and wavelength of the incoming light and the relative photodiode to NIST-traceable calibration diode active areas. A custom electromechanical interface was developed to make these measurements within the SwRI Vacuum Radiometric Calibration Chamber. While still in the single pixel stage, full 1K × 1K focal plane arrays are possible using existing CMOS readout electronics and hold great promise for inclusion in future spaceflight instrument concepts.

Citation Download Citation

Michael W. Davis, Thomas K. Greathouse, Kurt D. Retherford, Gregory S. Winters, Yibin Bai, and James W. Beletic "Far ultraviolet sensitivity of silicon CMOS sensors", Proc. SPIE 8453, High Energy, Optical, and Infrared Detectors for Astronomy V, 845308 (25 September 2012); https://doi.org/10.1117/12.926677

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