Paper
11 October 2012 Contact metal effects in indium phosphide nanowire transistor
Author Affiliations +
Abstract
We have investigated electrical properties of indium phosphide nanowire field effect transistors with four different types of metal electrodes (Cr, Ti, Au, and Pt). The nanowires with a width of 50 nm were undoped and grown by metal-organic chemical vapor deposition. Among the four types of metal electrodes, Cr/InP and Ti/InP showed ambipolar conduction, while Pt/InP and Au/InP exhibited p-type conduction. Extracted Schottky barrier heights suggest that barrier heights do not vary linearly with respect to the metal workfunction. Although the Pt/InP features the smallest barrier height, the Au/InP showed the highest drain current at a given gate bias.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jin-woo Han, Andrew J. Lohn, Meyya Meyyappan, and Nobuhiko P. Kobayashi "Contact metal effects in indium phosphide nanowire transistor", Proc. SPIE 8467, Nanoepitaxy: Materials and Devices IV, 84670Z (11 October 2012); https://doi.org/10.1117/12.930530
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KEYWORDS
Metals

Electrodes

Resistance

Chromium

Gold

Platinum

Nanowires

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