Chemically induced electric field: flat band potential engineering

T. Bak; Z. Guo; W. Li; A.J. Atanacio; J. Nowotny

doi:10.1117/12.927749

5 October 2012 Chemically induced electric field: flat band potential engineering

T. Bak, Z. Guo, W. Li, A.J. Atanacio, J. Nowotny

Proceedings Volume 8469, Solar Hydrogen and Nanotechnology VII; 84690Q (2012) https://doi.org/10.1117/12.927749
Event: SPIE Solar Energy + Technology, 2012, San Diego, California, United States

Abstract

The present work considers engineering of the flat band potential, FBP, of metal oxides in a controlled manner. The aim is to minimise the energy losses related to recombination. The related experimental approaches include imposition of a chemically-induced electric field using the phenomena of segregation, diffusion and the formation of multilayer systems. This paper considers several basic phenomena that allow the modification of the surface charge and the space charge at the gas/solid and solid/liquid interfaces.

Citation Download Citation

T. Bak, Z. Guo, W. Li, A.J. Atanacio, and J. Nowotny "Chemically induced electric field: flat band potential engineering", Proc. SPIE 8469, Solar Hydrogen and Nanotechnology VII, 84690Q (5 October 2012); https://doi.org/10.1117/12.927749

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