Electroabsorption and refractive index modulation induced by intersubband transitions in GaN/AlN heterostructure waveguides

A. Lupu; M. Tchernycheva; S. Sakr; Y. Kotsar; N. Isac; E. Monroy; F. H. Julien

doi:10.1117/12.2003117

4 March 2013 Electroabsorption and refractive index modulation induced by intersubband transitions in GaN/AlN heterostructure waveguides

A. Lupu, M. Tchernycheva, S. Sakr, Y. Kotsar, N. Isac, E. Monroy, F. H. Julien

Author Affiliations +

Proceedings Volume 8625, Gallium Nitride Materials and Devices VIII; 86251X (2013) https://doi.org/10.1117/12.2003117
Event: SPIE OPTO, 2013, San Francisco, California, United States

Abstract

We present the determination of the index variation in the GaN/AlN heterostructures related to the population/depletion of the quantum wells fundamental state leading to the intersubband (ISB) absorption variation in the spectral domain around 1.5μm. The experiments were performed using wide-strip waveguide structure. It is shown that the determination of the refraction index in a wide-strip structure is possible when the waveguide is multimode in the vertical direction with a small number of higher order modes. The variation of the refractive index is then deduced from the shift of the position of the beating interference maxima of different order modes. The obtained index variation with bias from complete depletion to full population of the quantum wells is around -5×10^-3. This value is similar to the typical index variation achieved in InP and is an order of magnitude higher than the index variation obtained in silicon. The remarkable feature is that maximum index variation is obtained at the wings of the ISB transition line where absorption is reduced with respect to the peak value. This index variation mechanism opens prospects for the realization of ISB phase modulators by inserting the active region in a Mach-Zehnder interferometer.

Citation Download Citation

A. Lupu, M. Tchernycheva, S. Sakr, Y. Kotsar, N. Isac, E. Monroy, and F. H. Julien "Electroabsorption and refractive index modulation induced by intersubband transitions in GaN/AlN heterostructure waveguides", Proc. SPIE 8625, Gallium Nitride Materials and Devices VIII, 86251X (4 March 2013); https://doi.org/10.1117/12.2003117

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
7 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Waveguides

Absorption

Quantum wells

Refractive index

Modulators

Heterojunctions

Silicon

Show All Keywords

Keywords/Phrases

Search In:

Publication Years