Role of nonequivalent atomic step edges in the growth of InGaN by plasma-assisted molecular beam epitaxy

Henryk Turski; Marcin Siekacz; Marta Sawicka; Zbig R. Wasilewski; Sylwester Porowski; Czesław Skierbiszewski

doi:10.1117/12.2003850

27 March 2013 Role of nonequivalent atomic step edges in the growth of InGaN by plasma-assisted molecular beam epitaxy

Henryk Turski, Marcin Siekacz, Marta Sawicka, Zbig R. Wasilewski, Sylwester Porowski, Czesław Skierbiszewski

Proceedings Volume 8625, Gallium Nitride Materials and Devices VIII; 862527 (2013) https://doi.org/10.1117/12.2003850
Event: SPIE OPTO, 2013, San Francisco, California, United States

Abstract

In this work we study the growth mechanisms of InGaN in plasma-assisted molecular beam epitaxy (PAMBE). We investigate growth of InGaN layers on vicinal GaN (0001) substrates. Indium incorporation as a function of gallium and nitrogen fluxes was examined. We propose microscopic model of InGaN growth by PAMBE postulating different indium adatom incorporation mechanisms on two nonequivalent atomic step edges of wurtzite crystal. The different roles of gallium and nitrogen fluxes during the growth of InGaN layers is discussed.

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Henryk Turski, Marcin Siekacz, Marta Sawicka, Zbig R. Wasilewski, Sylwester Porowski, and Czesław Skierbiszewski "Role of nonequivalent atomic step edges in the growth of InGaN by plasma-assisted molecular beam epitaxy", Proc. SPIE 8625, Gallium Nitride Materials and Devices VIII, 862527 (27 March 2013); https://doi.org/10.1117/12.2003850

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