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4 February 2013 Structural and optical properties of (In,Ga)As/GaP quantum dots and (GaAsPN/GaPN) diluted-nitride nanolayers coherently grown onto GaP and Si substrates for photonics and photovoltaics applications
O. Durand, C. Robert, T. Nguyen Thanh, S. Almosni, T. Quinci, J. Kuyyalil, C. Cornet, A. Létoublon, C. Levallois, J.-M. Jancu, J. Even, L. Pédesseau, M. Perrin, N. Bertru, A. Sakri, N. Boudet, A. Ponchet, P. Rale, L. Lombez, J.-F. Guillemoles, X. Marie, A. Balocchi, P. Turban, S. Tricot, Mircea Modreanu, S. Loualiche, A. Le Corre
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Proceedings Volume 8631, Quantum Sensing and Nanophotonic Devices X; 863126 (2013) https://doi.org/10.1117/12.2012670
Event: SPIE OPTO, 2013, San Francisco, California, United States
Abstract
Lattice-matched GaP-based nanostructures grown on silicon substrates is a highly rewarded route for coherent integration of photonics and high-efficiency photovoltaic devices onto silicon substrates. We report on the structural and optical properties of selected MBE-grown nanostructures on both GaP substrates and GaP/Si pseudo-substrates. As a first stumbling block, the GaP/Si interface growth has been optimised thanks to a complementary set of thorough structural analyses. Photoluminescence and time-resolved photoluminescence studies of self-assembled (In,Ga)As quantum dots grown on GaP substrate demonstrate a proximity of two different types of optical transitions interpreted as a competition between conduction band states in X and Γ valleys. Structural properties and optical studies of GaAsP(N)/GaP(N) quantum wells coherently grown on GaP substrates and GaP/Si pseudo substrates are reported. Our results are found to be suitable for light emission applications in the datacom segment. Then, possible routes are drawn for larger wavelengths applications, in order to address the chip-to-chip and within-a-chip optical interconnects and the optical telecom segments. Finally, results on GaAsPN/GaP heterostructures and diodes, suitable for PV applications are reported.
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O. Durand, C. Robert, T. Nguyen Thanh, S. Almosni, T. Quinci, J. Kuyyalil, C. Cornet, A. Létoublon, C. Levallois, J.-M. Jancu, J. Even, L. Pédesseau, M. Perrin, N. Bertru, A. Sakri, N. Boudet, A. Ponchet, P. Rale, L. Lombez, J.-F. Guillemoles, X. Marie, A. Balocchi, P. Turban, S. Tricot, Mircea Modreanu, S. Loualiche, and A. Le Corre "Structural and optical properties of (In,Ga)As/GaP quantum dots and (GaAsPN/GaPN) diluted-nitride nanolayers coherently grown onto GaP and Si substrates for photonics and photovoltaics applications", Proc. SPIE 8631, Quantum Sensing and Nanophotonic Devices X, 863126 (4 February 2013); https://doi.org/10.1117/12.2012670
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KEYWORDS
Silicon
Interfaces
Quantum wells
Luminescence
Solar cells
Optical properties
Reflection
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