Paper
4 February 2013 Recent advances in GaSb-based structures for mid-infrared emitting lasers: spectroscopic study
Grzegorz Sęk, Marcin Motyka, Filip Janiak, Krzysztof Ryczko, Jan Misiewicz, Adam Bauer, Matthias Dallner, Robert Weih, Sven Höfling, Alfred Forchel, Sofiane Belahsene, Guilhem Boissier, Yves Rouillard
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Abstract
There are reviewed the optical properties of two kind of active regions of mid infrared laser devices both grown on GaSb substrates: GaInAsSb/AlGaInAsSb type I QWs for laser diodes and InAs/GaInAsSb type II QWs for interband cascade lasers. There are presented their crucial optical properties and the related current challenges with respect to the device performances. This covers such issues as spectral tenability of the emission via the structure parameters, the band gap discontinuities, carrier loss mechanisms and oscillator strengths. For that, spectroscopic techniques have been used (photoluminescence and its temperature dependence, and photoreflectance) and combined with the energy level calculations based on effective mass approximation and kp theory. Eventually, the potential for further material optimization and prospects for the improved device performances are also discussed.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Grzegorz Sęk, Marcin Motyka, Filip Janiak, Krzysztof Ryczko, Jan Misiewicz, Adam Bauer, Matthias Dallner, Robert Weih, Sven Höfling, Alfred Forchel, Sofiane Belahsene, Guilhem Boissier, and Yves Rouillard "Recent advances in GaSb-based structures for mid-infrared emitting lasers: spectroscopic study", Proc. SPIE 8631, Quantum Sensing and Nanophotonic Devices X, 86312O (4 February 2013); https://doi.org/10.1117/12.2016699
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KEYWORDS
Quantum wells

Indium arsenide

Quantum cascade lasers

Electrons

Semiconductor lasers

Mid-IR

Oscillators

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