Accurate measurement of external quantum efficiency in semiconductors

Chengao Wang; Mansoor Sheik-Bahae; Jeffrey Cederberg; Daniel Bender

doi:10.1117/12.2007519

11 March 2013 Accurate measurement of external quantum efficiency in semiconductors

Chengao Wang, Mansoor Sheik-Bahae, Jeffrey Cederberg, Daniel Bender

Proceedings Volume 8638, Laser Refrigeration of Solids VI; 86380H (2013) https://doi.org/10.1117/12.2007519
Event: SPIE OPTO, 2013, San Francisco, California, United States

Abstract

The state of current research in laser cooling of semiconductors is reviewed. Record external quantum efficiency (99.5%) is obtained for a GaAs/InGaP heterostructure bonded to a dome lens at 100 K by All-optical Scanning Laser Calorimetry (ASLC). Pulsed-Power-dependent photoluminescence measurement (Pulsed-PDPL) is proved to be an efficient way to determine the quantum efficiency and screen the sample quality before processing and fabrication. Second harmonic generation (767nm) from a 5ns Er:YAG laser is used as the pump source for the pulsed-PDPL experiment.

Citation Download Citation

Chengao Wang, Mansoor Sheik-Bahae, Jeffrey Cederberg, and Daniel Bender "Accurate measurement of external quantum efficiency in semiconductors", Proc. SPIE 8638, Laser Refrigeration of Solids VI, 86380H (11 March 2013); https://doi.org/10.1117/12.2007519

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