Optimizing the multiple quantum well thickness of an InGaN blue light emitting diode

Bing Xu; Jun Liang Zhao; Shu Guo Wang; Hai Tao Dai; Sheng-Fu Yu; Ray-Ming Lin; Fu-Chuan Chu; Chou-Hsiung Huang; Xiao Wei Sun

doi:10.1117/12.2001788

4 March 2013 Optimizing the multiple quantum well thickness of an InGaN blue light emitting diode

Bing Xu, Jun Liang Zhao, Shu Guo Wang, Hai Tao Dai, Sheng-Fu Yu, Ray-Ming Lin, Fu-Chuan Chu, Chou-Hsiung Huang, Xiao Wei Sun

Author Affiliations +

Proceedings Volume 8641, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVII; 864103 (2013) https://doi.org/10.1117/12.2001788
Event: SPIE OPTO, 2013, San Francisco, California, United States

Abstract

InGaN/GaN blue light emitting diodes with varied quantum well thickness from 2.4 nm to 3.6 nm are fabricated and characterized by atmosphere pressure metalorganic chemical vapor deposition (AP-MOCVD). Experimental results show that the exciton localization effect is enhanced from 21.76 to 23.48 by increasing the quantum well thickness from 2.4 nm to 2.7 nm. However, with the further increase of quantum well thickness, the exciton localization effect becomes weaker. Meanwhile, the peak wavelength of electroluminescence redshift with the increase of well thickness due to the larger quantum confined Stark effect (QCSE). In addition, the efficiency droop can be improved by increasing the well thickness.

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Bing Xu, Jun Liang Zhao, Shu Guo Wang, Hai Tao Dai, Sheng-Fu Yu, Ray-Ming Lin, Fu-Chuan Chu, Chou-Hsiung Huang, and Xiao Wei Sun "Optimizing the multiple quantum well thickness of an InGaN blue light emitting diode", Proc. SPIE 8641, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVII, 864103 (4 March 2013); https://doi.org/10.1117/12.2001788

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