Short-wave boundary of applicability of relief-phase reflecting holograms on a thin film of a chalcogenide glassy semiconductor

Sergey N. Koreshev; Vladislav P. Ratushnyi

doi:10.1117/12.981446

1 March 2013 Short-wave boundary of applicability of relief-phase reflecting holograms on a thin film of a chalcogenide glassy semiconductor

Sergey N. Koreshev, Vladislav P. Ratushnyi

Author Affiliations +

Proceedings Volume 8644, Practical Holography XXVII: Materials and Applications; 86440W (2013) https://doi.org/10.1117/12.981446
Event: SPIE OPTO, 2013, San Francisco, California, United States

Abstract

In the course of carrying out the present work, it was stated that a parasitic surface nano-structurization is peculiar to reflective relief-phase holograms obtained on thin layers of a chalcogenide glassy semiconductor (CGS). The results of experimental researches of the effect of a relief height for reflective relief-phase holograms on the parameters of their surface parasitic nano-structurization are presented in this paper. With the use of data obtained applying atomic force microscope (AFM) Solver P-47 and software complex “Nova”, it was defined a short-wave boundary for applicability of such holograms. In addition to the conventional software complex “Nova”, aiming at reducing time necessary for determination of a short-wave boundary for relief-phase hologram applicability, there was developed a software module, which operation is based on the determination of the averaged-out over a basic area (scanning area) relief profile shape of the hologram structure, the definition of root-mean-square roughness (RMSR) values of its surface averaged-out over the same basic area, and on the subsequent computation of the boundary wavelength for the hologram applicability. The determined short-wave boundary value came to 80nm. Starting from this value, the holograms with the relief height optimal from the view of maximal diffraction efficiency meet the Marechal’s criterion σ ≤ λ/27 (σ - rootmean- square roughness parameter) and the criterion of permitted light diffusion σ ≤ λ/100. Thus, the level of light diffusion and aberration permitted for precision optical systems is ensured in a reconstructed with their use image.

Citation Download Citation

Sergey N. Koreshev and Vladislav P. Ratushnyi "Short-wave boundary of applicability of relief-phase reflecting holograms on a thin film of a chalcogenide glassy semiconductor", Proc. SPIE 8644, Practical Holography XXVII: Materials and Applications, 86440W (1 March 2013); https://doi.org/10.1117/12.981446

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
7 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Holograms

Diffraction

Holographic optical elements

Diffusion

Reflectivity

Chalcogenides

Etching

Show All Keywords

Keywords/Phrases

Search In:

Publication Years