Advanced overlay stability control with correction per exposure on immersion scanners

Jinkyu Han; Jinseok Heo; Chan Hwang; Jeongho Yeo

doi:10.1117/12.2011379

10 April 2013 Advanced overlay stability control with correction per exposure on immersion scanners

Jinkyu Han, Jinseok Heo, Chan Hwang, Jeongho Yeo

Proceedings Volume 8681, Metrology, Inspection, and Process Control for Microlithography XXVII; 86811D (2013) https://doi.org/10.1117/12.2011379
Event: SPIE Advanced Lithography, 2013, San Jose, California, United States

Abstract

In this paper, we propose advanced overlay stability control improving conventional stability control, Baseliner™ and reference wafers with new vertical structure for effective stability control. We verify improved overlay stability control experimentally by using this stability control method. Also we suggest that additional improvements can be achieved by controllable process terms. For focus stability control, we make reference wafers which can measure overlay and focus simultaneously on the same wafer to minimize monitoring wafers.

Citation Download Citation

Jinkyu Han, Jinseok Heo, Chan Hwang, and Jeongho Yeo "Advanced overlay stability control with correction per exposure on immersion scanners", Proc. SPIE 8681, Metrology, Inspection, and Process Control for Microlithography XXVII, 86811D (10 April 2013); https://doi.org/10.1117/12.2011379

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