Paper
31 May 2013 A SiGe BiCMOS W-band passive imaging receiver using lossless flicker-noise cancellation
Vipul Jain, Farbod Behbahani
Author Affiliations +
Abstract
This paper presents the design and measured results of a highly integrated silicon-based receiver chip for W-band imaging applications. The receiver chip integrates all necessary RF and analog functions including millimeter-wave amplification and power detection, baseband amplification, sample-and-hold, clock generation, imager calibration, bias generation, and digital control. Using a novel flicker-noise cancellation technique, the imaging receiver achieves a record NETD of 0.22K/0.15K/0.1K for 3ms/10ms/30ms integration time, and a responsivity of 140 MV/W. The chip is fabricated in a 0.18-µm SiGe BiCMOS technology with 240/280-GHz fT/fmax and occupies 2.5mm×2.5mm. The power dissipation of the receiver is 40 mW.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vipul Jain and Farbod Behbahani "A SiGe BiCMOS W-band passive imaging receiver using lossless flicker-noise cancellation", Proc. SPIE 8715, Passive and Active Millimeter-Wave Imaging XVI, 871504 (31 May 2013); https://doi.org/10.1117/12.2014717
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KEYWORDS
Receivers

Imaging systems

Sensors

Silicon

Clocks

Amplifiers

Analog electronics

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