Recent developments using TowerJazz SiGe BiCMOS platform for mmWave and THz applications

Arjun Kar-Roy; David Howard; Edward J. Preisler; Marco Racanelli

doi:10.1117/12.1518475

31 May 2013 Recent developments using TowerJazz SiGe BiCMOS platform for mmWave and THz applications

Arjun Kar-Roy, David Howard, Edward J. Preisler, Marco Racanelli

Proceedings Volume 8715, Passive and Active Millimeter-Wave Imaging XVI; 871505 (2013) https://doi.org/10.1117/12.1518475
Event: SPIE Defense, Security, and Sensing, 2013, Baltimore, Maryland, United States

Abstract

In this paper, we report on the highest speed 240GHz/340GHz F_T/F_MAX NPN which is now available for product designs in the SBC18H4 process variant of TowerJazz’s mature 0.18μm SBC18 silicon germanium (SiGe) BiCMOS technology platform. NFMIN of ~2dB at 50GHz has been obtained with these NPNs. We also describe the integration of earlier generation NPNs with F_T/F_MAX of 240GHz/280GHz into SBC13H3, a 0.13μm SiGe BiCMOS technology platform. Next, we detail the integration of the deep silicon via (DSV), through silicon via (TSV), high-resistivity substrate, sub-field stitching and hybrid-stitching capability into the 0.18μm SBC18 technology platform to enable higher performance and highly integrated product designs. The integration of SBC18H3 into a thick-film SOI substrate, with essentially unchanged F_T and F_MAX, is also described. We also report on recent circuit demonstrations using the SBC18H3 platform: (1) a 4-element phased-array 70-100GHz broadband transmit and receive chip with flat saturated power greater than 5dBm and conversion gain of 33dB; (2) a fully integrated W-band 9-element phase-controllable array with responsivity of 800MV/W and receiver NETD is 0.45K with 20ms integration time; (3) a 16-element 4x4 phased-array transmitter with scanning in both the E- and H-planes with maximum EIRP of 23-25 dBm at 100-110GHz; (4) a power efficient 200GHz VCO with -7.25dBm output power and tuning range of 3.5%; and (5) a 320GHz 16-element imaging receiver array with responsivity of 18KV/W at 315GHz, a 3dB bandwidth of 25GHz and a low NEP of 34pW/Hz1/2. Wafer-scale large-die implementation of the phased-arrays and mmWave imagers using stitching in TowerJazz SBC18 process are also discussed.

Citation Download Citation

Arjun Kar-Roy, David Howard, Edward J. Preisler, and Marco Racanelli "Recent developments using TowerJazz SiGe BiCMOS platform for mmWave and THz applications", Proc. SPIE 8715, Passive and Active Millimeter-Wave Imaging XVI, 871505 (31 May 2013); https://doi.org/10.1117/12.1518475

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