All-semiconductor plasmonics for mid-IR applications

T. Taliercio; V. Ntsame Guilengui; L. Cerutti; J. B. Rodriguez; E. Tournié

doi:10.1117/12.2025260

13 September 2013 All-semiconductor plasmonics for mid-IR applications

T. Taliercio, V. Ntsame Guilengui, L. Cerutti, J. B. Rodriguez, E. Tournié

Proceedings Volume 8807, Nanophotonic Materials X; 880702 (2013) https://doi.org/10.1117/12.2025260
Event: SPIE NanoScience + Engineering, 2013, San Diego, California, United States

Abstract

We investigate highly doped InAsSb layers grown by molecular beam epitaxy on GaSb substrates. Electrical and optical characterizations demonstrate a metallic behavior with the possibility to control the plasma frequency in the mid-infrared range by adjusting the doping level. Plasmonic resonators based on this new kind of metal can be realized for mid-IR applications. Sub-wavelength periodic arrays are fabricated in the InAsSb layer and localized surface plasmon resonances are observed in reflectance experiments. A perfect control of the doping level and of the geometry of the periodic arrays allows adjusting the frequency of the plasmonic resonances. Our work shows that GaSb-based materials could be the building block for all-semiconductor mid-infrared plasmonic devices.

Citation Download Citation

T. Taliercio, V. Ntsame Guilengui, L. Cerutti, J. B. Rodriguez, and E. Tournié "All-semiconductor plasmonics for mid-IR applications", Proc. SPIE 8807, Nanophotonic Materials X, 880702 (13 September 2013); https://doi.org/10.1117/12.2025260

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