Optical mode modulation of AlGaInP multi quantum well laser diodes

Chih-Tsang Hung; Shen-Che Huang; Tien-Chang Lu

doi:10.1117/12.2024042

26 September 2013 Optical mode modulation of AlGaInP multi quantum well laser diodes

Chih-Tsang Hung, Shen-Che Huang, Tien-Chang Lu

Proceedings Volume 8816, Nanoengineering: Fabrication, Properties, Optics, and Devices X; 88160L (2013) https://doi.org/10.1117/12.2024042
Event: SPIE NanoScience + Engineering, 2013, San Diego, California, United States

Abstract

We investigate the influence of passivation structure on the optical mode distribution and LI characteristics for the edge emitting AlGaInP-GaInP visible laser diode (LD). For traditional single-layer Si₃N₄ or SiO₂ passivation designs, the modification of dielectric layer thickness can determinate the lateral near-field confinement and change the horizontal far-field (FF) divergence. By increasing the film thickness, the non-radiation absorption come from Au-Ti can be improved and it leads to a narrow FF divergence beam. As continue to increasing the thickness, thicker passivation provides a better confinement factor and then the far-field pattern turn to be wider. For LI characteristics, it is necessary to deposit a thick enough passivation to reduce metal absorption. However, it cause much thermal energy accumulated in the ridge waveguide and deteriorate the quantum efficiency as adopting a too thick dielectric layer. Finally, we demonstrate a high power AlGaInP-GaInP multi quantum wells (MQWs) LD adopted a high-reflectivity passivation to enhance the LI characteristics and keep a suitable far-field divergence angle simultaneously. Under the design of threepair optical thin films, it cannot only avoid the metal absorption but also enhance emitting efficiency and heat dissipation by using a high reflective and good thermal conductive Al₂O₃/Ta₂O₅ multilayer. The measured room-temperature threshold current (I_th) and characteristic temperature (T₀) can be arrived 44.5mA and 104.2K at 16.4° far-field divergence.

Citation Download Citation

Chih-Tsang Hung, Shen-Che Huang, and Tien-Chang Lu "Optical mode modulation of AlGaInP multi quantum well laser diodes", Proc. SPIE 8816, Nanoengineering: Fabrication, Properties, Optics, and Devices X, 88160L (26 September 2013); https://doi.org/10.1117/12.2024042

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available