Paper
18 September 2013 Improvement of the light extraction efficiency in light emitting diodes (LEDs) using ray trace
Melissa N. Ricketts, Roland Winston
Author Affiliations +
Abstract
The effectiveness of Light Emitting Diode (LED) depends on several inherent factors.which contribute.to their overall efficiency. Here we explore the Light Extraction Efficiency (LEE) ηextraction, in the LED semiconductor substrate, which can be defined as the number of photons emitted into free space per second divided by the number of photons emitted from the active semiconductor region per second. The generally large difference in index of refraction nsc between the semiconductor substrate and the surrounding media(air) nair creates the total internal reflection (TIR) that is responsible for the limiting factor in light extraction of the material. LEEs differ depending on the semiconductor material used for the pn junction as well as the surface treatment of the material. It has been shown that rough surface treatments create more favorable conditions for light extraction. To better understand what takes place at the surface of the semiconductor, we adress the derivation of blackbody radiation and how it is related to our model. We then introduce a triangle-like geometry into the rough surface treatment and demonstrate using monte-carlo ray-trace (Light Tools Software), that close to 100% LEE can be obtained for surface treatments of this design.
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Melissa N. Ricketts and Roland Winston "Improvement of the light extraction efficiency in light emitting diodes (LEDs) using ray trace", Proc. SPIE 8834, Nonimaging Optics: Efficient Design for Illumination and Solar Concentration X, 88340O (18 September 2013); https://doi.org/10.1117/12.2027891
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KEYWORDS
Light emitting diodes

Semiconductors

Photons

Compound parabolic concentrators

Interfaces

Ray tracing

Refraction

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