Paper
9 September 2013 Defects on high-resolution negative-tone resist: "The revenge of the blobs"
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Abstract
Resist materials rely on solubility differences between the exposed and unexposed areas to create the desired image. Most negative-tone resists achieve the solubility difference by crosslinking the exposed area causing it to be insoluble in developer. The negative tone resist studied here is a high sensitivity negativetone resist that relies on polarity switching, similar to a positive-tone mechanism, but where the exposed area is insoluble in aqueous developer resulting in a negative-tone image. During mask evaluation for 14nm optical technology applications of the studied non-cross linking (polarity switching) resist, 1 - 5 μm size blob-like defects were found in large numbers under certain exposure conditions. This paper will describe the process and methodologies used to investigate these blob defects.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. I. Sanchez, L. K. Sundberg, L. D. Bozano, R. Sooriyakumaran, D. P. Sanders, T. Senna, M. Tanabe, T. Komizo, I. Yoshida, and A. E. Zweber "Defects on high-resolution negative-tone resist: "The revenge of the blobs"", Proc. SPIE 8880, Photomask Technology 2013, 88800V (9 September 2013); https://doi.org/10.1117/12.2028753
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KEYWORDS
Photomasks

Semiconducting wafers

Inspection

Switching

Chromium

Switches

Lamps

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