Paper
25 July 2013 Modern high power semiconductor devices
Andrzej Napieralski, Małgorzata Napieralska, Łukasz Starzak, Mariusz Zubert
Author Affiliations +
Proceedings Volume 8902, Electron Technology Conference 2013; 890203 (2013) https://doi.org/10.1117/12.2031339
Event: Electron Technology Conference 2013, 2013, Ryn, Poland
Abstract
Today, power semiconductor devices enable sustaining several kilovolts and kiloamperes. New structures are constantly being developed for almost every particular device type. However, below the advanced technological concepts, proper design still relies on a few simple rules that result from physical operating principles and limits of semiconductor structures.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andrzej Napieralski, Małgorzata Napieralska, Łukasz Starzak, and Mariusz Zubert "Modern high power semiconductor devices", Proc. SPIE 8902, Electron Technology Conference 2013, 890203 (25 July 2013); https://doi.org/10.1117/12.2031339
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KEYWORDS
Field effect transistors

Semiconductors

Transistors

Resistance

Switching

Molybdenum

Doping

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