Ultra-shallow fluorine and nitrogen implantation from r.f. plasma and its effect on electro-physical parameters of Al/HfO2/Si MOS structures

M. Kalisz; R. Mroczyński; M. Szymańska

doi:10.1117/12.2030304

25 July 2013 Ultra-shallow fluorine and nitrogen implantation from r.f. plasma and its effect on electro-physical parameters of Al/HfO₂/Si MOS structures

M. Kalisz, R. Mroczyński, M. Szymańska

Author Affiliations +

Proceedings Volume 8902, Electron Technology Conference 2013; 89020E (2013) https://doi.org/10.1117/12.2030304
Event: Electron Technology Conference 2013, 2013, Ryn, Poland

Abstract

This study described a novel and original method of ultra-shallow fluorine and nitrogen implantation from radio frequency (RF = 13,56MHz) CF4 and NH3 plasmas, performed in classical RIE / PECVD reactors. The performed experiments indicate that ultra-shallow implantation of high concentration of fluorine and nitrogen ions by using r.f. plasma reactors (PECVD ad RIE) is feasible. It is also possible to control the implantation process parameters, ie implantation depth and maximum concentration, by controlling the parameters of the plasma processes. Electrical characterization of MOS structures with HfO2 layer as a gate dielectric, shows that samples implanted with nitrogen, have the best insulating properties, better even the reference sample. Samples prepared by fluorine implantation, exhibit much worse I-V behavior for low, medium and high electric fields, than all samples studied in this article. This samples exhibit the highest leakage currents, too.

Citation Download Citation

M. Kalisz, R. Mroczyński, and M. Szymańska "Ultra-shallow fluorine and nitrogen implantation from r.f. plasma and its effect on electro-physical parameters of Al/HfO₂/Si MOS structures", Proc. SPIE 8902, Electron Technology Conference 2013, 89020E (25 July 2013); https://doi.org/10.1117/12.2030304

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