Simulation of water photo electrolysis with III-nitride semiconductor nano wires

Bernd Witzigmann; Maximilian Bettenhausen; Marvin Mewes; Heiko Fülle; Friedhard Römer

doi:10.1117/12.2041230

7 March 2014 Simulation of water photo electrolysis with III-nitride semiconductor nano wires

Bernd Witzigmann, Maximilian Bettenhausen, Marvin Mewes, Heiko Fülle, Friedhard Römer

Proceedings Volume 8980, Physics and Simulation of Optoelectronic Devices XXII; 89800S (2014) https://doi.org/10.1117/12.2041230
Event: SPIE OPTO, 2014, San Francisco, California, United States

Abstract

Water splitting under illumination with a GaN/InGaN planar and nano wire structure is modeled using a drift diffusion approach. The main features of the experiment such as current density without biasing and current saturation effects are explained by the simulation. The electrolyte where ionic transport occurs is modeled as material with diffusion coefficients matching ionic diffusivity experiments. The simulation allows design and analysis of GaN based nano structures and their water photo electrolysis efficiency.

Citation Download Citation

Bernd Witzigmann, Maximilian Bettenhausen, Marvin Mewes, Heiko Fülle, and Friedhard Römer "Simulation of water photo electrolysis with III-nitride semiconductor nano wires", Proc. SPIE 8980, Physics and Simulation of Optoelectronic Devices XXII, 89800S (7 March 2014); https://doi.org/10.1117/12.2041230

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