THz acoustic spectroscopy based on GaN nanostructures

Kung-Hsuan Lin; Dzung-Han Tsai; Kuan-Jen Wang; Sheng-Hui Chen; Kai-Lun Chi; Jin-Wei Shi; Po-Cheng Chen; Jinn-Kong Sheu

doi:10.1117/12.2036171

7 March 2014 THz acoustic spectroscopy based on GaN nanostructures

Kung-Hsuan Lin, Dzung-Han Tsai, Kuan-Jen Wang, Sheng-Hui Chen, Kai-Lun Chi, Jin-Wei Shi, Po-Cheng Chen, Jinn-Kong Sheu

Proceedings Volume 8984, Ultrafast Phenomena and Nanophotonics XVIII; 89840C (2014) https://doi.org/10.1117/12.2036171
Event: SPIE OPTO, 2014, San Francisco, California, United States

Abstract

Due to the high attenuation in vitreous silica, acoustic attenuations in the THz regime are typically measured by incoherent techniques such as Raman, neutron, and X-ray scattering. Here, we utilized multiple-quantum-well structures to demonstrate acoustic spectroscopy of vitreous silica up to THz regime. The acoustic properties of silica thin films prepared by chemical deposition methods were characterized in the sub-THz regime. This technique may be useful in resolving debated issues relating to Boson peak around 1 THz.

Citation Download Citation

Kung-Hsuan Lin, Dzung-Han Tsai, Kuan-Jen Wang, Sheng-Hui Chen, Kai-Lun Chi, Jin-Wei Shi, Po-Cheng Chen, and Jinn-Kong Sheu "THz acoustic spectroscopy based on GaN nanostructures", Proc. SPIE 8984, Ultrafast Phenomena and Nanophotonics XVIII, 89840C (7 March 2014); https://doi.org/10.1117/12.2036171

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