Progress towards commercialization of 25-Gb/s VCSELs

Li Wang; Chuan Xie; Neinyi Li; Shenghong Huang

doi:10.1117/12.2040187

27 February 2014 Progress towards commercialization of 25-Gb/s VCSELs

Li Wang, Chuan Xie, Neinyi Li, Shenghong Huang

Proceedings Volume 9001, Vertical-Cavity Surface-Emitting Lasers XVIII; 90010D (2014) https://doi.org/10.1117/12.2040187
Event: SPIE OPTO, 2014, San Francisco, California, United States

Abstract

In this paper, we will present the development progress of 850-nm VCSELs operating at 25 Gbit/s and beyond at Sumitomo Electric Device Innovations USA. With improved growth of indium-containing quantum wells, we have demonstrated low-power-consumption VCSELs that can operate at 25 – 28 Gbit/s with reduced current density and enhanced reliability. We will also present recent progress on the improved performance of the new device in EDR cables.

Citation Download Citation

Li Wang, Chuan Xie, Neinyi Li, and Shenghong Huang "Progress towards commercialization of 25-Gb/s VCSELs", Proc. SPIE 9001, Vertical-Cavity Surface-Emitting Lasers XVIII, 90010D (27 February 2014); https://doi.org/10.1117/12.2040187

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