High-power and high-efficiency broad-area diode laser emitting at 1.5 um

T. Garrod; D. Olson; M. Klaus; C. Zenner; C. Galstad; F. Brunet; L. Mawst; D. Botez

doi:10.1117/12.2040458

27 February 2014 High-power and high-efficiency broad-area diode laser emitting at 1.5 μm

T. Garrod, D. Olson, M. Klaus, C. Zenner, C. Galstad, F. Brunet, L. Mawst, D. Botez

Proceedings Volume 9002, Novel In-Plane Semiconductor Lasers XIII; 90021F (2014) https://doi.org/10.1117/12.2040458
Event: SPIE OPTO, 2014, San Francisco, California, United States

Abstract

Long-wavelength diode lasers, emitting at 1.5x μm, have been optimized for maximum continuous-wave (CW) electroto- optical power conversion efficiency (PCE) and output power. A maximum CW PCE value of 50% is achieved at room-temperature from a 0.10 x 1.5 mm² diode laser with a CW output power of 2.5 W from a laser structure with a single-quantum-well (SQW) active region. Reliability tests show no degradation when run at 5A, 40°C for < 4000 hours of operation.

Citation Download Citation

T. Garrod, D. Olson, M. Klaus, C. Zenner, C. Galstad, F. Brunet, L. Mawst, and D. Botez "High-power and high-efficiency broad-area diode laser emitting at 1.5 μm", Proc. SPIE 9002, Novel In-Plane Semiconductor Lasers XIII, 90021F (27 February 2014); https://doi.org/10.1117/12.2040458

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